ipm-r3 series 600v / 100a 7 in one-package 7MBP100RTB060 features temperature protection provided by directly detecting the junction temperature of the igbts low power loss and soft switching high performance and high reliability igbt with overheating protection higher reliability because of a big decrease in number of parts in built-in control circuit maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. bus voltage (between terminal p and n) collector-emitter voltage collector current dc 1ms duty=72.3% collector power dissipation one transistor collector current dc 1ms forward current of diode collector power dissipation one transistor input voltage of power supply for pre-driver input signal voltage input signal current alarm signal voltage alarm signal current junction temperature operating case temperature storage temperature isolating voltage (case-terminal) screw torque mounting (m5) terminal (m5) v dc v dc(surge) v sc v ces *1 i c i cp -i c *2 p c *3 i c i cp i f p c *3 v cc *4 v in *5 i in v alm *6 i alm *7 t j t op t stg v iso *8 item 0 0 200 0 - - - - - - - - -0.5 -0.5 - -0.5 - - -20 -40 - - - 450 500 400 600 100 200 100 347 50 100 50 198 20 vcc+0.5 3 vcc 20 150 100 125 ac2.5 3.5 * 9 3.5 * 9 v v v v a a a w a a a w v v ma v ma c c c kv nm nm note *1 : vces shall be applied to the input voltage between terminal p and u or v or w or db, n and u or v or w or db. *2 : 125 c/fwd rth(j-c)/(ic x v f max)=125/0.665/(100 x 2.6)x100=72.3% *3 : pc=125 c/igbt rth(j-c)=125/0.36=347w [inverter] pc=125 c/igbt rth(j-c)=125/0.63=198w [break] *4 : vcc shall be applied to the input voltage between terminal no. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *5 : vin shall be applied to the input voltage between terminal no. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10. *6 : v alm shall be spplied to the voltage between terminal no. 16 and 10. *7 : i alm shall be applied to the input current to terminal no. 16. *8 : 50hz/60hz sine wave 1 minute. *9 : recommendable value : 2.5 to 3.0 nm fig.1 measurement of case temperature dc surge shortoperating item symbol min. typ. max. unit weight weight wt - 450 - g *9 : (for 1 device, case is under the device) inverter brake
7MBP100RTB060 igbt-ipm control circuit item symbol condition min. typ. max. unit supply current of p-line side pre-driver(one unit) supply current of n-line side pre-driver input signal threshold voltage (on/off) input zener voltage alarm signal hold time limiting resistor for alarm switching trequency : 0 to 15khz tc=-20 to 125c fig.7 on off rin=20k ohm tc=-20c fig.2 tc=25c fig.2 tc=125c fig.2 i ccp i ccn v in(th) v z t alm r alm - - 1.00 1.25 - 1.1 - - 1425 - - 1.35 1.60 8.0 - 2.0 - 1500 18 65 1.70 1.95 - - - 4.0 1575 ma ma v v v ms ms ms ohm protection section ( vcc=15v) turn-on time turn-off time reverse recovery time maximum avalanche energy (a non-repetition) ton vdc=300v,tj=125c toff ic=100a fig.1, fig.6 trr vdc=300v, ic=100a fig.1, fig.6 p av internal wiring inductance=50nh main circuit wiring inductace=54nh thermal characteristics ( tc=25c) item symbol min. typ. max. unit junction to case thermal resistance case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(j-c) rth(c-f) - - 0.36 - - 0.665 - - 0.63 - 0.05 - c/w c/w c/w c/w inv igbt fwd brake igbt item symbol min. typ. max. unit dc bus voltage operating supply voltage of pre-driver screw torque (m5) v dc v cc - recommendable value over current protection level of inverter circuit over current protection level of brake circuit over current protection delay time sc protection delay time igbt chip over heating over heating protection hysteresis over heating protection temperature level over heating protection hysteresis under voltage protection level under voltage protection hysteresis electrical characteristics (at tc=tj=25c, vcc=15v unless otherwise specified.) main circuit item symbol condition min. typ. max. unit collector current at off signal input collector-emitter saturation voltage forward voltage of fwd i ces v ce(sat) v f i ces v ce(sat) v f v ce =600v vin terminal open. ic=100a ic=100a v ce =600v vin terminal open. ic=50a -ic=50a - - 1.0 ma - - 2.3 v - 1.8 - - - 2.6 v - 1.6 - - - 1.0 ma - - 2.2 v - 1.75 - - - 3.3 v - 1.9 - v 1.2 - - s - - 3.6 - - 0.3 100 - - mj terminal chip terminal chip terminal chip terminal chip i oc t doc t sc t joh t jh t coh t ch v uv v h tj=125c tj=125c tj=125c tj=125c fig.4 surface of igbt chips vdc=0v, ic=0a, case temperature 150 - - a 75 - - -5- --8 150 - - -20 - 110 - 125 -20 - 11.0 - 12.5 0.2 0.5 - a s s c c c v noise immunity ( vdc=300v, vcc=15v, test circuit fig.5) common mode rectangular noise common mode lightning surge pulse width 1s, polarity ,10minuets judge : no over-current, no miss operating rise time 1.2s, fall time 50s interval 20s, 10 times judge : no over-current, no miss operating 2.0 - - 5.0 - - item symbol condition min. typ. max. unit item condition min. typ. max. unit kv kv - - 400 v 13.5 15.0 16.5 v 2.5 - 3.0 nm collector current at off signal input collector-emitter saturation voltage forward voltage of diode inverter brake
7MBP100RTB060 igbt-ipm vin ic vin(th) vin(th) ton toff trr on 90% 50% 90% 10% figure 1. switching time waveform definitions /vin vge (inside ipm) fault (inside ipm) /alm on on off off gate on gate off normal alarm talm>max. talm>max. talm 2ms(typ.) fault : over-current, over-heat or under-voltage figure 2. input / output timing diagram ic i alm i alm i alm ic ic tsc figure. 4 definition of tsc dc 15v dc 15v vccu vinu gndu 20k 20k vcc vinx gnd p u v w n ct ac200v noise 4700p cooling fin earth + sw1 sw2 figure 5. noise test circuit vcc 20k vin gnd p ipm l dc 300v ic n + dc 15v hcpl- 4504 icc vcc p i pm u dc vin 15v v p.g w +8v fsw gnd n figure 6. switching characteristics test circuit figure 7. icc test circuit
7MBP100RTB060 igbt-ipm block diagram outline drawings, mm mass : 450g vccu 3 vinu 2 gndu 1 vccv 6 vinv 5 gndv 4 vccw 9 vinw 8 gndw 7 vcc 11 vinx 13 gnd 10 viny 14 vinz 15 12 alm 16 p u v w b n pre-driver include f ollow ing f unctions 1 amplif ier f or drive 2 short circuit protection 3 under voltage lockout circuit 4 over current protection 5 igbt chip over heating protection pre-driver pre-driver pre-driver pre-driver pre-driver pre-driver pre-driver r alm 1.5k ? over heating protection circuit pre-driver vindb
igbt-ipm characteristics control circuit characteristics (respresentative) 7MBP100RTB060 power supply current vs. switching frequency 0 5 10 15 20 25 switching frequency fsw (khz) 12 13 14 15 16 17 18 power supply voltage vcc (v) power supply current icc (ma) input signal threshold voltage vin ( on ), vin ( off ), (v) input signal threshold voltage vs. power supply voltage 14 12 10 8 6 4 2 0 under voltage v uvt (v) under voltage vs. junction temperature undervoltage hysterisis v h (v) under voltage hysterisis vs. junction temperature alarm hold time t alm (msec.) alarm hold time vs. power supply voltage overheating protection t coh ,t joh ( c ) oh hysterisis t ch ,t jh ( c) overheating characteristics t coh ,t joh ,t ch ,t jh vs. v cc tc=125c 20 40 60 80 100 120 140 junction temperature tj ( c ) 12 13 14 15 16 17 18 power supply voltage vcc ( v ) n-side p-side 60 50 40 30 20 10 0 tj=25c tj=125c 2.5 2.0 1.5 1.0 0.5 0 1.0 0.8 0.6 0.4 0.2 0 3.0 2.5 2.0 1.5 1.0 0.5 0 200 150 100 50 0 20 40 60 80 100 120 140 junction temperature tj ( c ) 12 13 14 15 16 17 18 power supply voltage vcc ( v )
7MBP100RTB060 igbt-ipm main circuit characteristics (respresentative) collector current vs. collector-emitter voltage collector current ic (a) collector current vs. collector-emitter voltage collector current ic (a) forward current vs. forward voltage (chip) forward current i f (a) 0 0.5 1 1.5 2 2.5 foeward voltage v f (v) 150 100 50 0 tj=25c(chip) 120 100 80 60 40 20 0 tj=25c(terminal) collector current vs. collector-emitter voltage collector current ic (a) tj=125c(chip) collector current vs. collector-emitter voltage collector current ic (a) tj=125c(terminal) forward current vs. forward voltage (terminal) forward current i f (a) 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce (v) 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce (v) 150 100 50 0 0 0.5 1 1.5 2 2.5 foeward voltage v f (v) 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce (v) 120 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce (v) 120 100 80 60 40 20 0 120 100 80 60 40 20 0
7MBP100RTB060 igbt-ipm transient thermal resistance 1 0.1 0.01 thermal resistance rth(j-c) (c/w ) reverse biased safe operating area collector current ic (a) 0 20 40 60 80 100 120 140 160 case temperature tc ( c ) collector power dissipation pc ( w ) power derating for fwd (per device) collector power dissipation pc (w) 0 100 200 300 400 500 600 700 collector-emitter voltage v ce (v) 300 250 200 150 100 50 0 < = vcc=15v, tj 125c power derating for igbt (per device) switching loss eon,eoff, err (mj/cycle) 10 8 6 4 2 0 0 20 40 60 80 100 120 collector current i c (a) switching loss vs. collector current edc=300v, vcc=15v, tj=25c switching loss eon,eoff, err (mj/cycle) switching loss vs. collector current edc=300v, vcc=15v, tj=125c 200 150 100 50 0 0 20 40 60 80 100 120 140 160 case temperature tc ( c ) 400 350 300 250 200 150 100 50 0 10 8 6 4 2 0 0 20 40 60 80 100 120 collector current i c (a) 0.001 0.01 0.1 1 pulse width pw (sec.)
7MBP100RTB060 igbt-ipm 20 40 60 80 100 120 140 160 collector current ic ( a ) switching time ton,toff,tf ( nsec. ) 10000 1000 100 10 switching time vs. collector current edc=300v, vcc=15v, tj=25c reverse recovery current irr (a) reverse recovery time trr (nsec.) reverse recovery characteristics trr, irr, vs. i f 100 10 1 20 40 60 80 100 120 140 160 foeward current i f (a) switching time ton,toff,tf ( nsec. ) 10000 1000 100 10 switching time vs. collector current edc=300v, vcc=15v, tj=125c 20 40 60 80 100 120 140 160 collector current ic ( a )
7MBP100RTB060 igbt-ipm dynamic brake characteristics (respresentative) collector current vs. collector-emitter voltage tj=25c (terminal) 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce ( v ) collector current ic ( a ) 80 60 40 20 0 collector current vs. collector-emitter voltage tj=125c (terminal) collector current ic ( a ) 0 0.5 1 1.5 2 2.5 3 collector-emitter voltage v ce ( v ) transient thermal resistance reverse biased safe operating area 1 0.1 0.01 thermal resistance rth(j-c) (c/w ) < = vcc=15v, tj 125c collector current ic (a) 0 100 200 300 400 500 600 700 collector-emitter voltage v ce (v) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 case temperature tc ( c ) 250 200 1 50 100 50 0 collector power dissipation pc ( w ) power derating for igbt (per device) 80 60 40 20 0 0.001 0.01 0.1 1 pulse width pw (sec.)
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